AON2411 general description product summary v ds i d (at v gs =-4.5v) -20a r ds(on) (at v gs =-4.5v) < 8m r ds(on) (at v gs =-3.0v) < 10.2m r ds(on) (at v gs =-2.5v) < 11.6m r ds(on) (at v gs =-1.8v) < 17.5m typical esd protection hbm class 2 application 12v p-channel mosfet orderable part number package type form minimum order quantity -12v ? latest trench power mosfet technology ? very low r ds(on) at 1.8v v gs ? low gate charge ? esd protection ? rohs and halogen-free compliant AON2411 dfn 2x2c tape & reel 3000 ? battery path load switch ? system load switch dfn 2x2c top view bottom view pin 1 pin 1 g d s s g d symbol v ds v gs i dm t j , t stg symbol t 10s steady-state t a =25c thermal characteristics w i d -80 -20 parameter max c units junction and storage temperature range -55 to 150 typ maximum junction-to-ambient a c/w r q ja 20 45 25 c/w maximum junction-to-ambient a d 55 va absolute maximum ratings t a =25c unless otherwise noted 8 v maximum units t a =25c t a =70c power dissipation b 3.2 t a =70c p d -12 5.0 gate-source voltage pulsed drain current c -15.5 parameter drain-source voltage continuous drain current g rev.1.0: december 2013 www.aosmd.com page 1 of 5
symbol min typ max units bv dss -12 v v ds =-12v, v gs =0v -1 t j =55c -5 i gss 10 a v gs(th) gate threshold voltage -0.3 -0.6 -0.9 v 6.6 8.0 t j =125c 8.6 10.4 8.1 10.2 m 9.2 11.6 m 13.7 17.5 m g fs 60 s v sd -0.59 -1 v i s -7 a c iss 2180 pf c oss 675 pf c rss 425 pf r g 13.5 q g 20 30 nc q gs 4 nc q gd 5.5 nc t d(on) 15 ns t r 45 ns t d(off) 135 ns m v gs =-4.5v, v ds =-6v, i d =-12a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =-250 m a, v gs =0v r ds(on) static drain-source on-resistance gate source charge gate drain charge switching parameters turn-on delaytime v ds =0v, v gs =8v maximum body-diode continuous current input capacitance gate-body leakage current diode forward voltage dynamic parameters v gs =-1.8v, i d =-8a reverse transfer capacitance v gs =0v, v ds =-6v, f=1mhz v ds =v gs, i d =-250 m a output capacitance forward transconductance turn-off delaytime v gs =-4.5v, v ds =-6v, r l =0.5 w , r gen =3 w turn-on rise time i s =1a,v gs =0v v ds =-5v, i d =-12a v gs =-4.5v, i d =-12a v gs =-2.5v, i d =-10a v gs =-3.0v, i d =-11a t d(off) 135 ns t f 185 ns t rr 28 ns q rr 13 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time i f =-12a, di/dt=100a/ m s turn-off delaytime turn-off fall time r gen =3 w i f =-12a, di/dt=100a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev.1.0: december 2013 www.aosmd.com page 2 of 5
typical electrical and thermal characteristics 0 20 40 60 80 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 5 10 15 20 0 5 10 15 20 25 30 r ds(on) (m w ww w ) -i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =-2.5v i d =-10a v gs =-4.5v i d =-12a v gs =-3.0v i d =-11a v gs =-1.8v i d =-8a 25 c 125 c v ds =-5v v gs =-1.8v v gs =-4.5v 0 20 40 60 80 0 1 2 3 4 5 -i d (a) -v ds (volts) figure 1: on-region characteristics (note e) v gs =-1.0v -1.5v -2.5v -4.5v -3.0v -2.0v v gs =-3.0v v gs =-2.5v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 5 10 15 20 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-12a 25 c 125 c rev.1.0: december 2013 www.aosmd.com page 3 of 5
typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 15 20 25 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 0 2 4 6 8 10 12 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) c oss c rss v ds =-6v i d =-12a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) v > or equal to 1.8 v 10 m s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 1.8 v figure 9: maximum forward biased safe operating area (note f) r q ja =55 c/w rev.1.0: december 2013 www.aosmd.com page 4 of 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l unclamped inductive switching (uis) test circuit & waveforms vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev.1.0: december 2013 www.aosmd.com page 5 of 5
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